Bi2Se1Te2
MatHub2d-124-Bi2Se1Te2
Property |
Value |
Space group |
(164, 'P-3m1') |
Crystal system |
hexagonal |
Magnetic |
No |
Band gap (PBE) (eV) |
0.87 |
Free energy (eV) |
-19.058 |
Free energy / atom (eV) |
-3.812 |
Lattice Parameters (basic)
a, b, c (Å): | 4.326 | 4.326 | 30.000 |
α, β, γ (°): | 90.000 | 90.000 | 120.000 |
Lattice Parameters (computed)
a, b, c (Å): | 4.332 | 4.332 | 30.000 |
α, β, γ (°): | 90.000 | 90.000 | 120.000 |
Property |
Value |
Band gap |
0.87 eV |
E-fermi |
-1.744 eV |
Vacuum level |
3.455 eV |
VBM |
-1.963 eV |
CBM |
-1.095 eV |
Work function |
5.199 eV |
Direct gap |
No |
Property |
Value |
Band gap |
0.87 eV |
E-fermi |
-1.744 eV |
Vacuum level |
3.455 eV |
VBM |
-1.963 eV |
CBM |
-1.095 eV |
Work function |
5.199 eV |
Cij (N/m) |
xx |
yy |
xy |
xx |
59.979 |
13.752 |
-0.000 |
yy |
13.752 |
59.979 |
-0.000 |
xy |
-0.000 |
-0.000 |
23.114 |
Phonon mode at Γ point (THz) |
-0.007 |
-0.005 |
-0.005 |
1.046 |
1.046 |
1.638 |
2.238 |
2.238 |
3.147 |
3.147 |
3.391 |
3.391 |
3.969 |
4.489 |
4.525 |
Carrier type |
C2D (N/m) |
Edef (eV) |
μ (cm2V-1s-1) |
x |
y |
x |
y |
x |
y |
hole |
59.07 |
58.19 |
-4.81 |
-4.48 |
-23.02 |
-26.11 |
electron |
-7.29 |
-7.24 |
244.16 |
243.89 |
Property |
Value |
from where |
JVASP-6298 |